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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Subject:  Strain

Results 1-20 of 27 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2Nov-2007Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
325-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
42009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
5Jul-2008Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistorsTan, K.-M.; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.-P. ; Balasubramanian, N.; Yeo, Y.-C. 
6Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
7Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
8Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
9Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
102009Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETsChin, H.-C.; Gong, X.; Liu, X.; Yeo, Y.-C. 
11Nov-2007N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layerLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
122008N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxyKoh, S.-M.; Sekar, K.; Lee, D.; Krull, W.; Wang, X.; Samudra, G.S. ; Yeo, Y.-C. 
132009NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stressLiu, B.; Tan, K.-M.; Yang, M.; Yeo, Y.-C. 
142009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
15May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
16May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
17Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
18Oct-2007Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
192013Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
2025-Apr-2008Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technologyWang, G.H.; Toh, E.-H.; Wang, X.; Hoe, K.-M.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C.