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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2009

Results 1-20 of 37 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12009A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.T.; Toh, E.-H.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
22009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
32009Advanced contact technology for MOSFETs: Integration of new materials for series resistance reductionYeo, Y.-C. ; Lee, R.T.-P. 
42009Applications of scanning near-field photon emission microscopyIsakov, D.V.; Tan, B.W.M.; Phang, J.C.H. ; Yeo, Y.C. ; Tio, A.A.B.; Zhang, Y.; Geinzer, T.; Balk, L.J.
52009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
62009Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentrationFang, L.W.-W.; Zheng, Z.; Pan, J.-S.; Zhao, R.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
72009Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric StackYa Lim, P.S.; Chi, D.Z.; Lo, G.Q.; Yeo, Y.C. 
82009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
92009Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stackYang, J.-J.; Chen, J.-D. ; Wise, R.; Steinmann, P.; Yu, M.-B.; Kwong, D.-L.; Li, M.-F.; Yeo, Y.-C. ; Zhu, C. 
102009Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopyFang, L.W.-W.; Zhao, R.; Pan, J.; Zhang, Z.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
112009Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostuctureWong, H.-S.; Tan, L.-H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
122009Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancementSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
132009Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contactsChin, H.-C.; Liu, X.; Tan, L.-S. ; Yeo, Y.-C. 
142009Junction technologies for devices with steep subthreshold swingYeo, Y.-C. 
152009Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETsChin, H.-C.; Gong, X.; Liu, X.; Yeo, Y.-C. 
162009NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stressLiu, B.; Tan, K.-M.; Yang, M.; Yeo, Y.-C. 
172009P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reductionSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
182009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
192009Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stressChin, H.-C.; Gong, X.; Guo, H.; Zhou, Q. ; Koh, S.-M.; Lee, H.K.; Shi, L.; Yeo, Y.-C. 
20Oct-2009Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formationYang, J.-J.; Chen, J.-D. ; Wise, R.; Yeo, Y.-C. ; Zhu, C.