Advanced contact technology for MOSFETs: Integration of new materials for series resistance reduction

Abstract

In this paper, new technology solutions for reducing contact resistance to enhance MOSFET drive current performance are discussed. We focus on several new approaches pioneered by our group for reducing electron and hole barrier heights between the heavily-doped diffusion region and the suicide layer in n-FET and p-FET, respectively. Integration of these approaches in advanced device architectures would contribute to the realization of high-performance CMOS devices. © The Electrochemical Society.