Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3203967
DC FieldValue
dc.titleAdvanced contact technology for MOSFETs: Integration of new materials for series resistance reduction
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorLee, R.T.-P.
dc.date.accessioned2014-06-19T02:58:23Z
dc.date.available2014-06-19T02:58:23Z
dc.date.issued2009
dc.identifier.citationYeo, Y.-C., Lee, R.T.-P. (2009). Advanced contact technology for MOSFETs: Integration of new materials for series resistance reduction. ECS Transactions 25 (7) : 291-302. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203967
dc.identifier.isbn9781566777445
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69238
dc.description.abstractIn this paper, new technology solutions for reducing contact resistance to enhance MOSFET drive current performance are discussed. We focus on several new approaches pioneered by our group for reducing electron and hole barrier heights between the heavily-doped diffusion region and the suicide layer in n-FET and p-FET, respectively. Integration of these approaches in advanced device architectures would contribute to the realization of high-performance CMOS devices. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3203967
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3203967
dc.description.sourcetitleECS Transactions
dc.description.volume25
dc.description.issue7
dc.description.page291-302
dc.identifier.isiut000338102400028
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