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|Title:||Junction technologies for devices with steep subthreshold swing||Authors:||Yeo, Y.-C.||Issue Date:||2009||Citation:||Yeo, Y.-C. (2009). Junction technologies for devices with steep subthreshold swing. Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 : 11-14. ScholarBank@NUS Repository. https://doi.org/10.1109/IWJT.2009.5166207||Abstract:||In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on device structure, doping level, doping gradient, and/or material properties. Device design exploiting semiconductor heterojunctions and lattice mismatched materials for strain engineering are also discussed. ©2009 IEEE.||Source Title:||Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009||URI:||http://scholarbank.nus.edu.sg/handle/10635/83877||ISBN:||9781424439447||DOI:||10.1109/IWJT.2009.5166207|
|Appears in Collections:||Staff Publications|
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