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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Date Issued:  [2010 TO 2019]
Author:  Zhou, Q.

Results 1-19 of 19 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
213-Jan-2014Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxyRichard D'Costa, V.; Wang, W.; Zhou, Q. ; Soon Tok, E. ; Yeo, Y.-C. 
32013Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineeringZhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
4Jan-2013Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealingIvana; Foo, Y.L.; Zhang, X.; Zhou, Q. ; Pan, J.; Kong, E.; Owen, M.H.S.; Yeo, Y.-C. 
5May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
628-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
72013Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drainLiu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
82014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
92012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
10Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
112011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
122013Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistorsKong, E.Y.-J.; Ivana; Zhang, X.; Zhou, Q. ; Pan, J.; Zhang, Z.; Yeo, Y.-C. 
137-Jan-2013NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier heightLim, P.S.Y.; Chi, D.Z.; Zhou, Q. ; Yeo, Y.-C. 
142011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
152012Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drainSubramanian, S.; Ivana; Zhou, Q. ; Zhang, X.; Balakrishnan, M.; Yeo, Y.-C. 
1611-Apr-2011Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrateHan, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. 
172012Silicon-carbon source and drain stressors: Carbon profile design by ion implantationZhou, Q. ; Koh, S.-M.; Tong, Y.; Henry, T.; Erokhin, Y.; Yeo, Y.-C. 
182013Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
192012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C.