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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Date Issued:  [2000 TO 2009]
Date Issued:  2005

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.
210-Jan-2005Finite-element study of strain distribution in transistor with silicon-germanium source and drain regionsYeo, Y.-C. ; Sun, J.
31-Jul-2005Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devicesWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Chin, A.; Du, A.Y.
4Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
5Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
62005Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structuresLiow, T.-Y.; Tan, K.-M.; Yeo, Y.-C. ; Agarwal, A.; Du, A.; Tung, C.-H.; Balasubramanian, N.
728-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
8Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
915-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
1028-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
11Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
12Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.
1315-Jul-2005Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistorsLow, T.; Li, M.F. ; Yeo, Y.C. ; Fan, W.J.; Ng, S.T.; Kwong, D.L.