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Ling Chung Ho

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

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Type:  Article
Department:  ELECTRICAL ENGINEERING

Results 1-20 of 75 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11998A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETsAng, D.S. ; Ling, C.H. 
2Jul-1984A diffusion model for carrier transport in a polycrystalline filmLing, C.H. 
315-May-1998A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiationCheng, Z.Y. ; Ling, C.H. 
41999A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 KLing, C.H. ; See, L.K.
5Jun-1997A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurementAng, D.S. ; Ling, C.H. 
6Mar-1999A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET'sAng, D.S. ; Ling, C.H. 
7Jan-1998A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sAng, D.S. ; Ling, C.H. 
82000A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Z.Y. ; Ling, C.H. 
91998A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET'sAng, D.S. ; Ling, C.H. 
101-Dec-1997An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurementsLing, C.H. ; Cheng, Z.Y. 
111994Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide filmsChoi, W.K. ; Ling, C.H. 
12Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
131992Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafersLing, C.H. ; Tay, T.M.
14Nov-1992Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurementsLing, C.H. ; Yeow, Y.T.; Ah, L.K.
152000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
16May-1992Characterization of rf-sputtered yttrium oxide filmsLing, C. ; Bhaskaran, J.; Choi, W. 
171998Charge trapping in interpoly ONO filmLira, K.S.; Ling, C.H. 
181997Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET'sLing, C.H. 
19Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
201-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.