Please use this identifier to cite or link to this item:
|Title:||Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers||Authors:||Ling, C.H.
|Issue Date:||1992||Citation:||Ling, C.H.,Tay, T.M. (1992). Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers. Applied Surface Science 59 (2) : 105-110. ScholarBank@NUS Repository.||Abstract:||Metal-oxide-semiconductor (MOS) capacitors Fabricated on mold cast polycrystalline silicon wafers exhibit a large stretch-out and distortion both in the capacitance-voltage as well as in the inversion capacitance-frequency characteristics. This is attributed to the high density of interface traps, which can respond to gate signals over a wide range of frequencies. The frequency behaviour of the inversion capacitance over the temperature range 30-200°C demonstrates the generation-recombination, and diffusion mechanisms of the minority carrier response to an AC gate signal. The dominance of one mechanism over the other can be characterised by a transition frequency. Arrhenius plots of the transition frequency reveal three activation energies: 1.09, 0.59 and 0.16 eV. The first two energies are attributed to the generation-recombination and diffusion mechanisms, whereas the third energy remains unidentified. A high transition temperature of 170°C is observed, which is in agreement with the high density of bulk generation-recombination centres present in the polycrystalline material. © 1992.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/61916||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 11, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.