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|Title:||Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements||Authors:||Ling, C.H.
|Issue Date:||Nov-1992||Citation:||Ling, C.H.,Yeow, Y.T.,Ah, L.K. (1992-11). Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements. Electron device letters 13 (11) : 587-589. ScholarBank@NUS Repository.||Abstract:||Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence.||Source Title:||Electron device letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/61928||ISSN:||01938576|
|Appears in Collections:||Staff Publications|
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