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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]

Results 121-140 of 145 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1212008SONOS type memory cell with ALD LaAlO blocking oxide for high speed operationHe, W. ; Chan, D.S.H. ; Cho, B.-J.
12212-Jul-2006Synthesis and dynamic random access memory behavior of a functional polyimideLing, Q.-D. ; Chang, F.-C.; Song, Y.; Zhu, C.-X. ; Liaw, D.-J.; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1232006Synthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complexSong, Y.; Tan, Y.P.; Teo, E.Y.H. ; Zhu, C. ; Chan, D.S.H. ; Ling, Q.D. ; Neoh, K.G. ; Kang, E.T. 
1242004TDDB characteristics of ultra-thin HfN/HfO2 gate stackYang, H.; Sa, N.; Tang, L.; Liu, X.; Kang, J.; Han, R.; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
1252008The use of thermal initiator to make organic bulk heterojunction solar cells with a good percolation pathTong, S.W. ; Zhang, C.F. ; Jiang, C.Y.; Ling, Q.D. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
1262008The use of thermal initiator to make organic bulk heterojunction solar cells with a good percolation pathTong, S.W. ; Zhang, C.F. ; Jiang, C.Y.; Ling, Q.D. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
1271-Mar-2004Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputteringKang, J.F. ; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Hu, H.; Lim, H.F. ; Wang, W.D.; Gui, D.; Kwong, D.-L.
1282003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.
129Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.
1302008Thermally stable polymer memory devices based on a π -conjugated triadLing, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Chen, Y.; Zhuang, X.-D.; Zhu, C. ; Chan, D.S.H. 
1312008Thermally stable polymer memory devices based on a π -conjugated triadLing, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Chen, Y.; Zhuang, X.-D.; Zhu, C. ; Chan, D.S.H. 
1322008Thermally stable polymer memory devices based on a π -conjugated triadLing, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Chen, Y.; Zhuang, X.-D.; Zhu, C. ; Chan, D.S.H. 
13328-Oct-2009Tristable electrical conductivity switching in a polyfluorene- diphenylpyridine copolymer with pendant carbazole groupsLiu, G. ; Liaw, D.-J.; Lee, W.-Y.; Ling, Q.-D. ; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
13428-Oct-2009Tristable electrical conductivity switching in a polyfluorene- diphenylpyridine copolymer with pendant carbazole groupsLiu, G. ; Liaw, D.-J.; Lee, W.-Y.; Ling, Q.-D. ; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1352005Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Kwong, D.-L.
1362009Volatile electrical switching in a functional polyimide containing electron-donor and -acceptor moietiesLiu, Y.-L.; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Wang, K.-L.; Liou, W.-T.; Zhu, C.-X. ; Chan, D.S.-H. 
1372009Volatile electrical switching in a functional polyimide containing electron-donor and -acceptor moietiesLiu, Y.-L.; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Wang, K.-L.; Liou, W.-T.; Zhu, C.-X. ; Chan, D.S.-H. 
1382010Wide memory window in graphene oxide charge storage nodesWang, S. ; Pu, J. ; Chan, D.S.H. ; Cho, B.J.; Loh, K.P. 
139Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.
14010-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.