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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Type:  Article

Results 101-120 of 137 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
101Apr-2011Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiationWang, G.H.; Wong, T.-C.; Wang, X.-C.; Zheng, H.-Y.; Chan, T.-K. ; Osipowicz, T. ; Foo, Y.-L.; Tripathy, S.
1022-Sep-1999Resist materials for proton micromachiningVan Kan, J.A. ; Sanchez, J.L.; Xu, B.; Osipowicz, T. ; Watt, F. 
103May-2003Rutherford backscattering analysis of GaN decompositionChoi, H.W.; Cheong, M.G.; Rana, M.A.; Chua, S.J. ; Osipowicz, T. ; Pan, J.S.
104Jul-2007Sidewall quality in proton beam writingChiam, S.Y. ; van Kan, J.A. ; Osipowicz, T. ; Udalagama, C.N.B. ; Watt, F. 
10520-Aug-2012Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometryChan, T.K. ; Fang, F.; Markwitz, A.; Osipowicz, T. 
106Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
107Jun-2003Stoichiometric and structural alterations in GaN thin films during anneallingRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Watt, F. ; Chua, S.J. 
10814-Jul-2003Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
1092007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1102008Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAlQiu, J.J.; Han, G.C.; Yeo, W.K.; Luo, P.; Guo, Z.B.; Osipowicz, T. 
1111-Aug-2011Structural and photoluminescence properties of Gd implanted ZnO single crystalsMurmu, P.P.; Mendelsberg, R.J.; Kennedy, J.; Carder, D.A.; Ruck, B.J.; Markwitz, A.; Reeves, R.J.; Malar, P. ; Osipowicz, T. 
112Sep-2000Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic He+ irradiation and thermal annealingZhang, Q.; Yoon, S.F.; Ahn, J.; Rusli, X.; Yang, H.; Gan, B.; Yang, C. ; Watt, F. ; Teo, E.J. ; Osipowice, T. 
1132007Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te systemSreenivasan, M.G.; Teo, K.L. ; Cheng, X.Z.; Jalil, M.B.A.; Liew, T.; Chong, T.C.; Du, A.Y.; Chan, T.K. ; Osipowicz, T. 
11413-Oct-2011Structure of melt-quenched AgIn3Te5Rangasami, C.; Malar, P. ; Osipowicz, T. ; Jain, M.K.; Kasiviswanathan, S.
11527-Dec-1999Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2Lee, Y.K.; Maung Latt, K.; Jaehyung, K.; Osipowicz, T. ; Lee, K.
116Jun-2000Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structureLee, Y.K.; Latt, K.M.; Osipowicz, T. ; Sher-Yi, C. 
117Dec-2000Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2Si structureLee, Y.K.; Latt, K.M.; Jaehyung, K.; Osipowicz, T. ; Chiam, S.-Y. ; Lee, K.
1181-Oct-2002Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.
119Mar-2000Sub 100 nm proton beam micromachining: theoretical calculations on resolution limitsVan Kan, J.A. ; Sum, T.C. ; Osipowicz, T. ; Watt, F. 
12031-Oct-2005Suppression of oxidation in nickel germanosilicides by Pt incorporationRahman, M.A.; Osipowicz, T. ; Pey, K.L.; Jin, L.J.; Choi, W.K.; Chi, D.Z.; Antoniadis, D.A.; Fitzgerald, E.A.; Isaacson, D.M.