Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2Si structure

Abstract

Interfacial reactions in Al-0.5%wtCu/Ti/SiO2Si structure have been investigated up to the annealing temperature of 600°C for 30 min in Argon ambient. Annealing temperature at above 500°C, Al alloy and Ti start to react and produce Al3Ti, which was already reported. Annealing at higher temperatures (550°C, and 600°C) made Al3 Ti transformed into Al5Ti2, which is thermodynamically more stable than Al3Ti. The unreacted 52 nm thick Ti which existed underneath of Al5Ti2 might lead to retardation of the reaction between Al5Ti2 and the underlying SiO2. Hence, the formation of ternary compound (AlxTiySiz) which is believed to be detrimental to the contact metallization layers was protected.