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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Refined By:
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Cho, B.J.
Author:  Li, M.-F.

Results 21-29 of 29 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
21Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
222003MIM capacitors with HfO2 and HfAlOx for Si RF and analog applicationsYu, X.; Zhu, C. ; Hu, H.; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
231-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
24Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
25Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
264-Nov-2002Thermal stability of (HfO2)x(Al2O 3)1-x on SiYu, H.Y. ; Wu, N.; Li, M.F. ; Zhu, C. ; Cho, B.J. ; Kwong, D.-L.; Tung, C.H.; Pan, J.S.; Chai, J.W.; Wang, W.D.; Chi, D.Z.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
27Oct-2003Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Cho, B.J. ; Li, M.F. ; Kwong, D.-L.
282003Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate DielectricsHuang, C.H.; Yang, M.Y.; Chin, A.; Chen, W.J.; Zhu, C.X. ; Cho, B.J. ; Li, M.-F. ; Kwong, D.L.
292003Voltage and Temperature Dependence of Capacitance of High-K HfO 2 MIM Capacitors: A Unified Understanding and PredictionZhu, C. ; Hu, H.; Yu, X.; Kim, S.J. ; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.L.