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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
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Publications

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Author:  Chor, E.F.
Department:  ELECTRICAL ENGINEERING

Results 1-20 of 30 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
11-Sep-1998Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47AsChor, E.F. ; Chong, W.K.; Heng, C.H. 
2Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
31998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
41997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
518-Jul-1996Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blockingChor, E.F. ; Peng, C.J. 
6Dec-1993Compound emitter heterojunction bipolar transistorChor, E.F. ; Peng, C.J. 
71997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
82000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
91997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
102000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
11Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
12Dec-2000Electron-beam irradiation-induced gate oxide degradationCho, B.J. ; Chong, P.F.; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
131999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
141999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
151-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
161998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
17Nov-1997Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterChor, E.F. ; Peng, C.J. 
18Nov-1997Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterChor, E.F. ; Peng, C.J. 
192000Improved PECVD pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PIDCha, C.L.; Vassiliev, V.; Chor, E.F. ; See, A.K. 
202000Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditionsChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S.; Yeo, I.S.