1. ScholarBank@NUS

Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Author:  Zhang, D.H.

Results 1-18 of 18 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
126-Mar-20071.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
29-Jul-2012Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantationWang, Y.; Zhang, D.H.; Chen, X.Z.; Jin, Y.J.; Li, J.H.; Liu, C.J. ; Wee, A.T.S. ; Zhang, S.; Ramam, A.
3Sep-2004Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnectsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
4May-2005Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Tan, K.H.; Yoon, S.F.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T. 
510-May-2006Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integrationYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Lu, P.W.; Foo, P.D.; Wee, A.T.S. 
6Aug-2004Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuitsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
7Sep-2005GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layerCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
827-May-2010InSbN based p-n junctions for infrared photodetectionChen, X.Z.; Zhang, D.H.; Liu, W.; Wang, Y.; Li, J.H.; Wee, A.T.S. ; Ramam, A.
92007Interdiffusion in narrow InGaAsNGaAs quantum wellsLiu, W.; Zhang, D.H.; Huang, Z.M.; Wang, S.Z.; Yoon, S.F.; Fan, W.J.; Liu, C.J. ; Wee, A.T.S. 
102006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
112002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
121-Mar-2005Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ng, T.K.; Loke, W.K.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T.S. 
13Sep-2004Study of copper diffusion into Ta and TaN barrier materials for MOS devicesLoh, S.W.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. 
1420-Jan-2002Study of copper diffusion into tantalum and tantalum diffusion into copperLoh, S.W.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. 
152002Study of copper diffusion into tantalum nitride (Ta2N) by rapid thermal annealing (RTA)Loh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
162001Study of Cu diffusion in Cu/Tan/SiO2/Si multilayer structuresZhang, D.H.; Loh, S.W.; Li, C.Y.; Foo, P.D.; Xie, J.; Liu, R. ; Wee, A.T.S. ; Zhang, L.; Lee, Y.K.
172007Study of ion-implanted in Sb1-xNx alloys using secondary ion mass spectroscopyWang, Y.; Zhang, D.H.; Huang, Z.M.; Liu, W.; Li, J.H.; Liu, C.J. ; Wee, A.T.S. 
18Aug-2004Thermal stability of Cu/Ta/ultra low k porous polymer structures for multilevel interconnectsZhang, D.H.; Yang, L.Y.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.