Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.102
Title: Study of copper diffusion into Ta and TaN barrier materials for MOS devices
Authors: Loh, S.W.
Zhang, D.H.
Li, C.Y.
Liu, R. 
Wee, A.T.S. 
Keywords: Barrier
Copper
Diffusion
Diffusion coefficient
Issue Date: Sep-2004
Citation: Loh, S.W., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S. (2004-09). Study of copper diffusion into Ta and TaN barrier materials for MOS devices. Thin Solid Films 462-463 (SPEC. ISS.) : 240-244. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.102
Abstract: Fick's law of diffusion was used to model the diffusion of copper into Ta and TaN barrier materials. From the matching with the experimental results, the Cu diffusion coefficients can be extracted as 2.870×10-14exp(- 0.1457 eV/kT) cm2/s in Ta and 2.4 × 10-14exp(-0.1395 eV/kT) cm2/s in TaN. Using the calculated results, a 25-nm Ta layer was sufficient to block Cu from diffusing through it by annealing at 600°C for half an hour and a 24-nm TaN layer was able to block the diffusion at 500 °C. Simple metal-oxide-semiconductor capacitors with dimension of 120 × 120 μm were fabricated with Ta and TaN barrier thickness of 25 nm and the results confirmed the thermal stability calculated according to the conditions mentioned above. © 2004 Published by Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/115302
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.102
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