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|Title:||InSbN based p-n junctions for infrared photodetection||Authors:||Chen, X.Z.
|Issue Date:||27-May-2010||Citation:||Chen, X.Z., Zhang, D.H., Liu, W., Wang, Y., Li, J.H., Wee, A.T.S., Ramam, A. (2010-05-27). InSbN based p-n junctions for infrared photodetection. Electronics Letters 46 (11) : 787-788. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.0713||Abstract:||InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k·p model based on In-N bond. © 2010 The Institution of Engineering and Technology.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96942||ISSN:||00135194||DOI:||10.1049/el.2010.0713|
|Appears in Collections:||Staff Publications|
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