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|Title:||Study of copper diffusion into tantalum nitride (Ta2N) by rapid thermal annealing (RTA)||Authors:||Loh, S.W.
|Issue Date:||2002||Citation:||Loh, S.W.,Zhang, D.H.,Liu, R.,Li, C.Y.,Wee, A.T.S. (2002). Study of copper diffusion into tantalum nitride (Ta2N) by rapid thermal annealing (RTA). Proceedings - 6th IEEE Workshop on Signal Propagation on Interconnects, SPI : 177-180. ScholarBank@NUS Repository. https://doi.org/10.1109/SPI.2002.258309||Abstract:||We have carried out direct diffusion measurements of Cu into Ta 2N. Thin films of 50nm thickness of Cu were grown onto a thick Ta2N layer of 1μm deposited by Ionized Metal Plasma (IMP). Samples were annealed in a rapid thermal system from temperatures ranging from 400°C to 750°C for periods of 180s. Results based on sheet resistance measurements, x-ray diffraction analyses, atomic force microscopy measurements and secondary ion mass spectroscopy analyses consistently follow a transformation of amorphous Ta2N to a crystalline phase and finally forming Cu-Ta-O compounds at higher annealing temperatures. The copper and tantalum nitride diffusion profile was performed using Secondary Ion Mass Spectroscopy. The Cu diffusion coefficients in Ta2N can be described by 1.5778 × 10-12 exp (-0.4066 eV/kT) cm2/s. To assure reliability, the extent of both diffusions should be considered in device design and processing. © 2002 IEEE.||Source Title:||Proceedings - 6th IEEE Workshop on Signal Propagation on Interconnects, SPI||URI:||http://scholarbank.nus.edu.sg/handle/10635/116127||ISBN:||0780398211||DOI:||10.1109/SPI.2002.258309|
|Appears in Collections:||Staff Publications|
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