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Gong Hao

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Gong, H.

Results 1-20 of 44 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
1Jul-2001Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsLiu, L. ; Wang, Y. ; Gong, H. 
220-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
320-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
42007Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substratesLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
51998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
61997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
720-Aug-2012Cobalt-mediated crystallographic etching of graphite from defectsWang, R.; Wang, J.; Gong, H. ; Luo, Z.; Zhan, D.; Shen, Z.; Thong, J.T.L. 
81997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
920-Jan-2002Crystal structure and properties of CU-Al-O thin filmsWang, Y. ; Gong, H. ; Liu, L. 
10May-2000Effect of magnetic anisotropy distribution in longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
11Sep-2000Effect of orientation ratio on recording performance for longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
121997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
132007Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputteringLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
142000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
151-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
16Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
1726-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
181999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
191999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
201-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.