Please use this identifier to cite or link to this item:
Title: Crystal structure and properties of CU-Al-O thin films
Authors: Wang, Y. 
Gong, H. 
Liu, L. 
Issue Date: 20-Jan-2002
Citation: Wang, Y.,Gong, H.,Liu, L. (2002-01-20). Crystal structure and properties of CU-Al-O thin films. International Journal of Modern Physics B 16 (1-2) : 308-313. ScholarBank@NUS Repository.
Abstract: P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac)2 and Al(acac)3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO2. After annealing, metal copper turned into CuO. Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.
Source Title: International Journal of Modern Physics B
ISSN: 02179792
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.