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|Title:||Crystal structure and properties of CU-Al-O thin films||Authors:||Wang, Y.
|Issue Date:||20-Jan-2002||Citation:||Wang, Y.,Gong, H.,Liu, L. (2002-01-20). Crystal structure and properties of CU-Al-O thin films. International Journal of Modern Physics B 16 (1-2) : 308-313. ScholarBank@NUS Repository.||Abstract:||P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac)2 and Al(acac)3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO2. After annealing, metal copper turned into CuO. Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.||Source Title:||International Journal of Modern Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/83594||ISSN:||02179792|
|Appears in Collections:||Staff Publications|
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