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Chunxiang Zhu

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 21-40 of 143 (Search time: 0.018 seconds).

Issue DateTitleAuthor(s)
2130-Nov-2006Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexesLing, Q.-D. ; Wang, W.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
222007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
23Aug-2004Characteristics of high-κ spacer offset-gated polysilicon TFTsXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
24Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
25Sep-2007Charge carrier generation/trapping mechanisms in HfO2/SiO2 stackSamanta, P.; Zhu, C. ; Chan, M.
26Dec-2010Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacksSamanta, P.; Zhu, C. ; Chan, M.
2716-Oct-2007Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Teo, E.Y.H. ; Zhu, C.X. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.G. 
82-Dec-2011Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memoryZhang, B.; Liu, G. ; Chen, Y.; Zeng, L.-J.; Zhu, C.-X. ; Neoh, K.-G. ; Wang, C.; Kang, E.-T. 
918-Apr-2010Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effectZhuang, X.-D.; Chen, Y.; Liu, G. ; Li, P.-P.; Zhu, C.-X. ; Kang, E.-T. ; Neoh, K.-G. ; Zhang, B.; Zhu, J.-H.; Li, Y.-X.
1026-Jul-2005Controlled micropatterning of a Si(100) surface by combined nitroxide-mediated and atom transfer radical polymerizationsXu, F.J. ; Song, Y.; Cheng, Z.P. ; Zhu, X.L.; Zhu, C.X. ; Kang, E.T. ; Neoh, K.G. 
1129-Mar-2004Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnectsNgwan, V.C.; Zhu, C. ; Krishnamoorthy, A.
1221-May-2012Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devicesWang, P.; Liu, S.-J.; Lin, Z.-H.; Dong, X.-C.; Zhao, Q.; Lin, W.-P.; Yi, M.-D.; Ye, S.-H.; Zhu, C.-X. ; Huang, W.
1313-Feb-2013Development of inverted organic solar cells with TiO2 interface layer by using low-temperature atomic layer depositionLin, Z.; Jiang, C.; Zhu, C. ; Zhang, J.
142006Direct tunneling stress-induced leakage current in ultrathin HfO 2SiO2 gate dielectric stacksSamanta, P.; Man, T.Y.; Zhang, Q.; Zhu, C. ; Chan, M.
15Sep-2006Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activationZhang, Q.; Huang, J.; Wu, N.; Chen, G. ; Hong, M. ; Bera, L.K.; Zhu, C. 
16May-2007Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopyYu, X.; Huang, J.; Yu, M.; Zhu, C. 
1710-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
18Sep-2004Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnectsNgwan, V.C.; Zhu, C. ; Krishnamoorthy, A.
192009Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stackYang, J.-J.; Chen, J.-D. ; Wise, R.; Steinmann, P.; Yu, M.-B.; Kwong, D.-L.; Li, M.-F.; Yeo, Y.-C. ; Zhu, C. 
202006Effective suppression of Fermi level pinning in polycrystalline-silicon/ high- k gate stack by using polycrystalline-silicon-germanium gate electrodeYu, X.; Zhu, C. ; Yu, M.