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https://doi.org/10.1109/LED.2006.880655
| Title: | Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation | Authors: | Zhang, Q. Huang, J. Wu, N. Chen, G. Hong, M. Bera, L.K. Zhu, C. |
Keywords: | Germanium High-κ gate dielectric Laser annealing (LA) MOSFET |
Issue Date: | Sep-2006 | Citation: | Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C. (2006-09). Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation. IEEE Electron Device Letters 27 (9) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880655 | Abstract: | A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation. © 2006 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82176 | ISSN: | 07413106 | DOI: | 10.1109/LED.2006.880655 |
| Appears in Collections: | Staff Publications |
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