Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.880655
Title: Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
Authors: Zhang, Q.
Huang, J.
Wu, N.
Chen, G. 
Hong, M. 
Bera, L.K.
Zhu, C. 
Keywords: Germanium
High-κ gate dielectric
Laser annealing (LA)
MOSFET
Issue Date: Sep-2006
Citation: Zhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C. (2006-09). Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation. IEEE Electron Device Letters 27 (9) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880655
Abstract: A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82176
ISSN: 07413106
DOI: 10.1109/LED.2006.880655
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