Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.880655
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dc.titleDrive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
dc.contributor.authorZhang, Q.
dc.contributor.authorHuang, J.
dc.contributor.authorWu, N.
dc.contributor.authorChen, G.
dc.contributor.authorHong, M.
dc.contributor.authorBera, L.K.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:26:17Z
dc.date.available2014-10-07T04:26:17Z
dc.date.issued2006-09
dc.identifier.citationZhang, Q., Huang, J., Wu, N., Chen, G., Hong, M., Bera, L.K., Zhu, C. (2006-09). Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation. IEEE Electron Device Letters 27 (9) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880655
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82176
dc.description.abstractA gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.880655
dc.sourceScopus
dc.subjectGermanium
dc.subjectHigh-κ gate dielectric
dc.subjectLaser annealing (LA)
dc.subjectMOSFET
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1109/LED.2006.880655
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue9
dc.description.page728-730
dc.description.codenEDLED
dc.identifier.isiut000240008800007
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