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|Title:||Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect||Authors:||Zhuang, X.-D.
|Issue Date:||18-Apr-2010||Citation:||Zhuang, X.-D., Chen, Y., Liu, G., Li, P.-P., Zhu, C.-X., Kang, E.-T., Neoh, K.-G., Zhang, B., Zhu, J.-H., Li, Y.-X. (2010-04-18). Conjugated-polymer-functionalized graphene oxide: Synthesis and nonvolatile rewritable memory effect. Advanced Materials 22 (15) : 1731-1735. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200903469||Abstract:||(Figure Presented) An ITO/TPAPAM-GO/AI memory device (see figure; ITO = indium tin oxide, TPAPAMGO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of -1.0 V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,.||Source Title:||Advanced Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/82083||ISSN:||09359648||DOI:||10.1002/adma.200903469|
|Appears in Collections:||Staff Publications|
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