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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.X.
Department:  COLLEGE OF DESIGN AND ENGINEERING
Date Issued:  [2002 TO 2009]
Date Issued:  2007

Results 1-20 of 28 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Feb-2007A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applicationsYu, X.; Yu, M.; Zhu, C. 
2Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
32007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
42007A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectricHuang, J.; Fu, J.; Zhu, C. ; Tay, A.A.O. ; Cheng, Z.-Y.; Leitz, C.W.; Lochtefeld, A.
52007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
6Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
7Sep-2007Charge carrier generation/trapping mechanisms in HfO2/SiO2 stackSamanta, P.; Zhu, C. ; Chan, M.
816-Oct-2007Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Teo, E.Y.H. ; Zhu, C.X. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.G. 
9May-2007Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopyYu, X.; Huang, J.; Yu, M.; Zhu, C. 
102007Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gateYu, X.; Yu, M.; Zhu, C. 
11Nov-2007Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectricXie, R.; Zhu, C. 
12Feb-2007Electrically bistable thin-film device based on PVK and GNPs polymer materialSong, Y.; Ling, Q.D. ; Lim, S.L.; Teo, E.Y.H. ; Tan, Y.P.; Li, L.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
132007Ge MOS transistor technology and reliabilityZhu, C. 
142007High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal processZhang, Q.C.; Huang, J.D.; Wu, N.; Chen, G.X. ; Hong, M.H. ; Bera, L.K.; Zhu, C. 
152007High-k gate stack formation on strained SiGe substrate for MOSFET applicationsZhu, C. ; Li, M.F. ; Huang, J.; Fu, J.
16Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
172007Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instabilityYu, X.; Zhu, C. ; Yu, M.
182-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
192007On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stackSamanta, P.; Zhu, C. ; Chan, M.
2024-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G.