Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.889519
Title: Electrically bistable thin-film device based on PVK and GNPs polymer material
Authors: Song, Y.
Ling, Q.D. 
Lim, S.L.
Teo, E.Y.H. 
Tan, Y.P.
Li, L.
Kang, E.T. 
Chan, D.S.H. 
Zhu, C. 
Keywords: Electrical bistability
Gold nanoparticle (GNP)
Memory effect
Poly(N-vinylcarbazole) (PVK)
Thin-film device
Issue Date: Feb-2007
Citation: Song, Y., Ling, Q.D., Lim, S.L., Teo, E.Y.H., Tan, Y.P., Li, L., Kang, E.T., Chan, D.S.H., Zhu, C. (2007-02). Electrically bistable thin-film device based on PVK and GNPs polymer material. IEEE Electron Device Letters 28 (2) : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889519
Abstract: We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82256
ISSN: 07413106
DOI: 10.1109/LED.2006.889519
Appears in Collections:Staff Publications

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