Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.889519
DC FieldValue
dc.titleElectrically bistable thin-film device based on PVK and GNPs polymer material
dc.contributor.authorSong, Y.
dc.contributor.authorLing, Q.D.
dc.contributor.authorLim, S.L.
dc.contributor.authorTeo, E.Y.H.
dc.contributor.authorTan, Y.P.
dc.contributor.authorLi, L.
dc.contributor.authorKang, E.T.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:27:13Z
dc.date.available2014-10-07T04:27:13Z
dc.date.issued2007-02
dc.identifier.citationSong, Y., Ling, Q.D., Lim, S.L., Teo, E.Y.H., Tan, Y.P., Li, L., Kang, E.T., Chan, D.S.H., Zhu, C. (2007-02). Electrically bistable thin-film device based on PVK and GNPs polymer material. IEEE Electron Device Letters 28 (2) : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889519
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82256
dc.description.abstractWe present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.889519
dc.sourceScopus
dc.subjectElectrical bistability
dc.subjectGold nanoparticle (GNP)
dc.subjectMemory effect
dc.subjectPoly(N-vinylcarbazole) (PVK)
dc.subjectThin-film device
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2006.889519
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue2
dc.description.page107-110
dc.description.codenEDLED
dc.identifier.isiut000243915100008
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.