Full Name
Yuan Ping Feng
Feng, Y.-P.
Ping Feng, Y.
Yuanping, F.
Feng Y.P.
Feng, Y.
Yuan-Ping, F.
Feng, Yuan Ping
Feng, Y.P.
Feng, Y.-Y.
Feng, Yuan-ping
Yuan Ping Feng
Main Affiliation


Results 161-180 of 477 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
16117-Oct-2012Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layerWong, T.I.; Tan, H.R.; Sentosa, D.; Wong, L.M.; Wang, S.J.; Feng, Y.P. 
1622009Erratum: Strain effects on work functions of pristine and potassium-decorated carbon nanotubes (Journal of Chemical Physics (2009) 131 (224701))Cai, Y. ; Zhang, A. ; Feng, Y.P. ; Zhang, C. ; Teoh, H.F.; Ho, G.W. 
163Aug-2009Evolution of domain walls and reversal mechanism in exchange-coupled nanolayersZhao, G.P.; Chen, L.; Huang, C.W.; Feng, Y.P. 
16429-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
1652006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.
1662013Evolution of topological surface states in antimony ultra-thin filmsYao, G.; Luo, Z.; Pan, F.; Xu, W.; Feng, Y.P. ; Wang, X.-S. 
1671993Exciton energies as a function of electric field: Confined quantum Stark effectFeng, Y.-P. ; Spector, H.N.
1681-Mar-1997Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential modelKoh, T.S.; Feng, Y.P. ; Spector, H.N.
16915-Sep-1997Exciton-exciton scattering in semiconducting quantum well structures in the presence of a transverse electric fieldKoh, T.S.; Feng, Y.P. ; Spector, H.N.
170Nov-2003Excitons in coupled quantum dotsXu, X. ; Feng, Y.P. 
17119-Feb-2001Excitons in semiconductor quantum discsKoh, T.S.; Feng, Y.P. ; Xu, X. ; Spector, H.N.
1722013Experimental evidences of topological surface states of β-Ag 2TeSulaev, A.; Ren, P.; Xia, B.; Lin, Q.H.; Yu, T.; Qiu, C.; Zhang, S.-Y.; Han, M.-Y.; Li, Z.P.; Zhu, W.G.; Wu, Q.; Feng, Y.P. ; Shen, L. ; Shen, S.-Q.; Wang, L.
173Dec-2011Fabrication of a TiNx/Ni/Au contact on ZnO films with high thermal stability and low resistanceChai, J.W.; Yang, M. ; Chi, D.Z.; Ong, J.L.T.; Wang, S.J.; Zhang, Z.; Pan, J.S.; Feng, Y.P. ; Chua, S.J.
17414-Feb-2006Fabrication of porous electrospun nanofibresZhang, Y.Z. ; Feng, Y. ; Huang, Z.-M.; Ramakrishna, S. ; Lim, C.T. 
175Jun-2007Fe-Nd-B-based hard magnets from bulk amorphous precursorZhang, J.; Lim, K.Y.; Feng, Y.P. ; Li, Y. 
176Oct-2011FePt grain size limit and required switching field in the presence of surface anisotropyGoh, J.Q.; Yuan, Z.-M.; Shen, L.; Zhou, T.; Feng, Y.P. 
1771-Feb-2019Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic AnisotropyZhang, Wen ; Wong, Ping Kwan Johnny ; Zhou, Xiaochao; Rath, Ashutosh ; Huang, Zhaocong; Wang, Hongyu ; Morton, Simon A; Yuan, Jiaren; Zhang, Lei ; Chua, Rebekah ; Zeng, Shengwei ; Liu, Er; Xu, Feng; Ariando ; Chua, Daniel HC ; Feng, Yuan Ping ; van der Laan, Gerrit; Pennycook, Stephen J ; Zhai, Ya; Wee, Andrew TS 
17829-Mar-2010Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnOYi, J.B. ; Lim, C.C.; Xing, G.Z.; Fan, H.M. ; Van, L.H. ; Huang, S.L.; Yang, K.S.; Huang, X.L.; Qin, X.B.; Wang, B.Y.; Wu, T.; Wang, L.; Zhang, H.T. ; Gao, X.Y. ; Liu, T. ; Wee, A.T.S. ; Feng, Y.P. ; Ding, J. 
1792006Ferromagnetism in Mg-doped AlN from ab initio studyWu, R.Q. ; Peng, G.W. ; Liu, L. ; Feng, Y.P. ; Huang, Z.G.; Wu, Q.Y.
1802009Ferromagnetism in semiconductors doped with non-magnetic elementsFeng, Y.P. ; Pan, H. ; Wu, R.Q. ; Shen, L. ; Ding, J. ; Yi, J.B. ; Wu, Y.H.