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https://doi.org/10.1088/0022-3727/45/41/415306
| Title: | Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer | Authors: | Wong, T.I. Tan, H.R. Sentosa, D. Wong, L.M. Wang, S.J. Feng, Y.P. |
Issue Date: | 17-Oct-2012 | Citation: | Wong, T.I., Tan, H.R., Sentosa, D., Wong, L.M., Wang, S.J., Feng, Y.P. (2012-10-17). Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer. Journal of Physics D: Applied Physics 45 (41) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/45/41/415306 | Abstract: | ZnO(002) epitaxial films have been successfully grown on Si(111) with CeO 2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO 2, good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO 2 on the Si substrate was determined to be (002)[210] ZnO∥(111)[112] CeO2∥(111)[112] Si. The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO 2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO 2 on Si(111). Sharp near-band edge emission at 3.253eV was detected for the ZnO film through photoluminiscence measurement at room temperature. © 2012 IOP Publishing Ltd. | Source Title: | Journal of Physics D: Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/96509 | ISSN: | 00223727 | DOI: | 10.1088/0022-3727/45/41/415306 |
| Appears in Collections: | Staff Publications |
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