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|Title:||Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer||Authors:||Wong, T.I.
|Issue Date:||17-Oct-2012||Citation:||Wong, T.I., Tan, H.R., Sentosa, D., Wong, L.M., Wang, S.J., Feng, Y.P. (2012-10-17). Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer. Journal of Physics D: Applied Physics 45 (41) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/45/41/415306||Abstract:||ZnO(002) epitaxial films have been successfully grown on Si(111) with CeO 2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO 2, good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO 2 on the Si substrate was determined to be (002) ZnO∥(111) CeO2∥(111) Si. The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO 2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO 2 on Si(111). Sharp near-band edge emission at 3.253eV was detected for the ZnO film through photoluminiscence measurement at room temperature. © 2012 IOP Publishing Ltd.||Source Title:||Journal of Physics D: Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96509||ISSN:||00223727||DOI:||10.1088/0022-3727/45/41/415306|
|Appears in Collections:||Staff Publications|
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