Please use this identifier to cite or link to this item:
Title: Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer
Authors: Wong, T.I.
Tan, H.R.
Sentosa, D.
Wong, L.M.
Wang, S.J.
Feng, Y.P. 
Issue Date: 17-Oct-2012
Citation: Wong, T.I., Tan, H.R., Sentosa, D., Wong, L.M., Wang, S.J., Feng, Y.P. (2012-10-17). Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer. Journal of Physics D: Applied Physics 45 (41) : -. ScholarBank@NUS Repository.
Abstract: ZnO(002) epitaxial films have been successfully grown on Si(111) with CeO 2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO 2, good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO 2 on the Si substrate was determined to be (002)[210] ZnO∥(111)[112] CeO2∥(111)[112] Si. The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO 2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO 2 on Si(111). Sharp near-band edge emission at 3.253eV was detected for the ZnO film through photoluminiscence measurement at room temperature. © 2012 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
ISSN: 00223727
DOI: 10.1088/0022-3727/45/41/415306
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.