Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/45/41/415306
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dc.titleEpitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer
dc.contributor.authorWong, T.I.
dc.contributor.authorTan, H.R.
dc.contributor.authorSentosa, D.
dc.contributor.authorWong, L.M.
dc.contributor.authorWang, S.J.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-16T09:24:15Z
dc.date.available2014-10-16T09:24:15Z
dc.date.issued2012-10-17
dc.identifier.citationWong, T.I., Tan, H.R., Sentosa, D., Wong, L.M., Wang, S.J., Feng, Y.P. (2012-10-17). Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layer. Journal of Physics D: Applied Physics 45 (41) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/45/41/415306
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96509
dc.description.abstractZnO(002) epitaxial films have been successfully grown on Si(111) with CeO 2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO 2, good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO 2 on the Si substrate was determined to be (002)[210] ZnO∥(111)[112] CeO2∥(111)[112] Si. The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO 2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO 2 on Si(111). Sharp near-band edge emission at 3.253eV was detected for the ZnO film through photoluminiscence measurement at room temperature. © 2012 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0022-3727/45/41/415306
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume45
dc.description.issue41
dc.description.page-
dc.description.codenJPAPB
dc.identifier.isiut000309609300012
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