Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model

Abstract

The dependence of the exciton linewidth broadening due to scattering by free carriers on carrier concentration, temperature, and well width, in semiconducting quantum well structures is theoretically studied using a finite confining potential model. The contribution to the linewidth due to ionization scattering of the exciton to the continuum electron-hole states, is included in the present calculations, which is shown to further enhance the importance of free carrier scattering in the broadening of the exciton linewidth. Quasi 3 dimensional features in the very narrow wells due to the finite confinement are also presented and discussed. © 1997 American Institute of Physics.