Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96547
Title: Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model
Authors: Koh, T.S.
Feng, Y.P. 
Spector, H.N.
Issue Date: 1-Mar-1997
Source: Koh, T.S.,Feng, Y.P.,Spector, H.N. (1997-03-01). Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model. Journal of Applied Physics 81 (5) : 2236-2240. ScholarBank@NUS Repository.
Abstract: The dependence of the exciton linewidth broadening due to scattering by free carriers on carrier concentration, temperature, and well width, in semiconducting quantum well structures is theoretically studied using a finite confining potential model. The contribution to the linewidth due to ionization scattering of the exciton to the continuum electron-hole states, is included in the present calculations, which is shown to further enhance the importance of free carrier scattering in the broadening of the exciton linewidth. Quasi 3 dimensional features in the very narrow wells due to the finite confinement are also presented and discussed. © 1997 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96547
ISSN: 00218979
Appears in Collections:Staff Publications

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