Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-3697(03)00265-8
Title: Excitons in coupled quantum dots
Authors: Xu, X. 
Feng, Y.P. 
Keywords: A. Semiconductors
Issue Date: Nov-2003
Citation: Xu, X., Feng, Y.P. (2003-11). Excitons in coupled quantum dots. Journal of Physics and Chemistry of Solids 64 (11) : 2301-2306. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-3697(03)00265-8
Abstract: Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole. © 2003 Elsevier Ltd. All rights reserved.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/111397
ISSN: 00223697
DOI: 10.1016/S0022-3697(03)00265-8
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