1. ScholarBank@NUS

Samudra,Ganesh S

rp00141

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 141-160 of 200 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1412008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1422007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1432007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1442010Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reductionKoh, S.-M.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Wang, X.; Zheng, H.; Zhao, Z.-Y.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
1451-Oct-2011Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser annealKoh, S.-M.; Wang, X.; Thanigaivelan, T.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
146Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
1472008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
148Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
149Apr-2010Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructureKoong, C.S.; Samudra, G. ; Liang, G. 
1502007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
1512009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
152May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
1532007Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETsWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T.; Chan, T.K.; Hoe, K.M.; Balakumar, S.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1542009Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakageKoh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C. 
1551-Jan-2008Simulation and design of a germanium L-shaped impact-ionization MOS transistorToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1562007Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scalingZhao, H.; Agrawal, N.; Javier, R.; Rustagi, S.C.; Jurczak, M.; Yeo, Y.-C. ; Samudra, G.S. 
1572011Size effect of embedded nanocrystals in floating gate MOSFET devicesCheng, X.Z. ; Jalil, M.B.A. ; Samudra, G.S. 
1582006Slanted oxide-bypassed superjunction power MOSFETsChen, Y.; Liang, Y.C. ; Samudra, G.S. 
159Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1602011Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.