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|Title:||Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure||Authors:||Koong, C.S.
|Issue Date:||Apr-2010||Citation:||Koong, C.S., Samudra, G., Liang, G. (2010-04). Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure. Japanese Journal of Applied Physics 49 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.04DN07||Abstract:||In this paper, we evaulated the shape and size effects of Si and Ge nanowire (NW) field-effect transistors (FETs) on device performance using sp3d5s* tight-binding (TB) model and semi-classical top-of-barrier ballistic transport model. Our simulation results show that smaller cross-sectional area is desirable for high frequency device applications and for larger ON-state currents, square cross-section may be desirable due to larger cross-sectional area and insulator capacitance. Furthermore, it is also observed that due to quantum effects, the gate capacitance to gate oxide capacitance (Cg/Cox) ratio for the small size NW FETs could be much less than one, rendering the classical assumptions and calculations invalid for nano scale FETs. In this sub-nano region, therefore, a new set of assumptions and calculations in terms of effective mass, bandgap, and one-dimensional density-of-states should be implemented as quantum effects start to play an important role in device performance. © 2010 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83011||ISSN:||00214922||DOI:||10.1143/JJAP.49.04DN07|
|Appears in Collections:||Staff Publications|
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