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|Title:||Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors||Authors:||Da, H.
tunneling field-effect transistors
|Issue Date:||2011||Citation:||Da, H.,Lam, K.-T.,Samudra, G.S.,Liang, G.,Chin, S.-K. (2011). Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2011.5991711||Abstract:||We investigate the device performance of heterojunction graphene nanoribbons tunneling field-effect transistors as a function of the doping concentrations based on the non-equilibrium Green's function. We observe that variation in source doping changes the OFF-state currents (IOFF), the ON-state currents (ION) and the subthreshold slope (SS) significantly while variation in drain doping changes mainly the I OFF. Additionally, low SS and large ION/IOFF ratio can be achieved by applying proper asymmetric source-drain doping. © 2011 IEEE.||Source Title:||Proceedings - International NanoElectronics Conference, INEC||URI:||http://scholarbank.nus.edu.sg/handle/10635/84206||ISBN:||9781457703799||ISSN:||21593523||DOI:||10.1109/INEC.2011.5991711|
|Appears in Collections:||Staff Publications|
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