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Samudra,Ganesh S

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

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Author:  Samudra, G.
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 41-60 of 200 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
41Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
42Jul-2007Design of gradient oxide-bypassed superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
431998Design of integrated current sensor for lateral IGBT power devicesLiang, Y.C. ; Samudra, G.S. ; Hor, V.S.S.
442013Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Huang, C.-F.
452005Design of superjunction power MOSFET devices using the gradient oxide-bypassed structureChen, Y.; Liang, Y.C. ; Samudra, G.S. 
4625-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
47Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G. 
482007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
492008Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applicationsToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
502007Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
5125-Apr-2008Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication processToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G.S. ; Yeo, Y.-C. 
52Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
53Dec-2007Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
5425-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
55May-2014Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTsHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.
56Oct-2007Electrical characteristics of memory devices with a high-k HfO2 trapping layer and dual SiO2/Si3 N4 tunneling layerWang, Y.Q.; Hwang, W.S.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.
17Apr-2011Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbonLam, K.-T.; Yang, Y.; Samudra, G.S. ; Yeo, Y.-C. ; Liang, G. 
182007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
192004Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regionsAng, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
202007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C.