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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 121-140 of 193 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1212001Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devicesGan, K.P.; Liang, Y.C. ; Samudra, G.S. ; Xu, S.M.; Yong, L.
1228-Feb-2005Power MOSFET having enhanced breakdown voltageLIANG, YUNG CHII ; SAMUDRA, GANESH SHANKAR ; GAN, KIAN PAAU; YANG, XIN 
123Aug-2004Practical superjuction MOSFET device performance under given process thermal cyclesZhong, H.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.
1242007Probing the ErSi1.7 Phase formation by micro-Raman spectroscopyLee, R.T.-P. ; Tan, K.-M.; Liow, T.-Y.; Ho, C.-S.; Tripathy, S.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
12521-May-2002Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS YOUG WEE; LEE, JAMES YONG MENG; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
12615-Aug-2006Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS; LEE, JAMES; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
1272006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1282007Progression of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.
129Jan-2008Progressive development of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.; Buddharaju, K.D.; Feng, H.
1301-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
131May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
1322007Realistic simulation of reverse characteristics of 4H-SIC power DiodeWei, G.; Liang, Y.C. ; Samudra, G.S. 
1332008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1342007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1352007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
136Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
1372008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
138Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
139Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
1402009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.