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Yee Chia Yeo

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article
Department:  PHYSICS

Results 1-13 of 13 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
113-Jan-2014Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxyRichard D'Costa, V.; Wang, W.; Zhou, Q. ; Soon Tok, E. ; Yeo, Y.-C. 
22008Chemical reversability of the electrical dedoping of conducting polymers: An organic chemically erasable programmable read-only memoryChia, P.-J. ; Yeo, Y.-C. ; Burroughes, J.H.; Friend, R.H. ; Ho, P.K.-H. 
32008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
4Feb-2007Controlled insulator-to-metal transformation in printable polymer composites with nanometal clustersSivaramakrishnan, S. ; Chia, P.-J. ; Yeo, Y.-C. ; Chua, L.-L. ; Ho, P.K.-H. 
52017Digital etch technique for forming ultra-scaled germanium-tin (Ge 1-x Sn x) fin structureWang, W ; Lei, D ; Dong, Y ; Gong, X ; Tok, E.S ; Yeo, Y.-C 
61-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
728-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
82013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
92015Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materialsJohll, H.; Samuel, M.; Koo, R.Y.; Kang, H.C. ; Yeo, Y.-C. ; Tok E.S. 
103-Dec-2007Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction ratesChia, P.-J. ; Chua, L.-L. ; Sivaramakrishnan, S. ; Zhuo, J.-M. ; Zhao, L.-H.; Sim, W.-S. ; Yeo, Y.-C. ; Ho, P.K.-H. 
112007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
121-Jun-2012Temperature-dependent phase separation during annealing of Ge 2Sb 2Te 5 thin films in vacuumZhang, Z.; Pan, J.; Fang, L.W.-W.; Yeo, Y.-C. ; Foo, Y.L.; Zhao, R.; Shi, L.; Tok, E.S. 
13Apr-2007Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectricsWang, X.P.; Yu, H.Y.; Li, M.-F. ; Zhu, C.X. ; Biesemans, S.; Chin, A.; Sun, Y.Y.; Feng, Y.P. ; Lim, A.; Yeo, Y.-C. ; Loh, W.Y.; Lo, G.Q.; Kwong, D.-L.