1. ScholarBank@NUS

Han Genquan

rp09719

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Han Genquan
(not current staff)
Variants
Han, G.-Q.
Han, G.
 
Main Affiliation
 
Faculty
 
Email
elehg@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2010 TO 2020]
Author:  Zhan, C.

Results 1-12 of 12 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12013(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETsZhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. 
2Feb-2012Device physics and design of a L-shaped germanium source tunneling transistorLow, K.L.; Zhan, C.; Han, G. ; Yang, Y.; Goh, K.-H.; Guo, P.; Toh, E.-H.; Yeo, Y.-C. 
3May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
42012Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistorLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
52010Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junctionHan, G. ; Yee, Y.S.; Guo, P.; Yang, Y.; Fan, L.; Zhan, C.; Yeo, Y.-C. 
62013Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrateLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
72013Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivationGuo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. 
82011High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modulesHan, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. 
92012PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical modelHan, G. ; Yang, Y.; Guo, P.; Zhan, C.; Low, K.L.; Goh, K.H.; Liu, B.; Toh, E.-H.; Yeo, Y.-C. 
1011-Apr-2011Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrateHan, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. 
111-Jun-2012Simulation of tunneling field-effect transistors with extended source structuresYang, Y.; Guo, P.; Han, G. ; Lu Low, K.; Zhan, C.; Yeo, Y.-C. 
12Apr-2011Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructureHan, G. ; Guo, P.; Yang, Y.; Fan, L.; Yee, Y.S.; Zhan, C.; Yeo, Y.-C.