PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210114

Title:	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
Authors:	Han, G. Yang, Y. Guo, P. Zhan, C. Low, K.L. Goh, K.H. Liu, B. Toh, E.-H. Yeo, Y.-C.
Issue Date:	2012
Citation:	Han, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210114
Abstract:	We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET. © 2012 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/84068
ISBN:	9781457720840
ISSN:	19308868
DOI:	10.1109/VLSI-TSA.2012.6210114
Appears in Collections:	Staff Publications

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