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|Title:||PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model||Authors:||Han, G.
|Issue Date:||2012||Citation:||Han, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210114||Abstract:||We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET. © 2012 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84068||ISBN:||9781457720840||ISSN:||19308868||DOI:||10.1109/VLSI-TSA.2012.6210114|
|Appears in Collections:||Staff Publications|
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