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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210114
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dc.titlePBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
dc.contributor.authorHan, G.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.contributor.authorZhan, C.
dc.contributor.authorLow, K.L.
dc.contributor.authorGoh, K.H.
dc.contributor.authorLiu, B.
dc.contributor.authorToh, E.-H.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:48:25Z
dc.date.available2014-10-07T04:48:25Z
dc.date.issued2012
dc.identifier.citationHan, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210114" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210114</a>
dc.identifier.isbn9781457720840
dc.identifier.issn19308868
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84068
dc.description.abstractWe report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2012.6210114
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSI-TSA.2012.6210114
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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