Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210114
Title: PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
Authors: Han, G. 
Yang, Y.
Guo, P.
Zhan, C.
Low, K.L.
Goh, K.H.
Liu, B.
Toh, E.-H.
Yeo, Y.-C. 
Issue Date: 2012
Source: Han, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210114
Abstract: We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET. © 2012 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84068
ISBN: 9781457720840
ISSN: 19308868
DOI: 10.1109/VLSI-TSA.2012.6210114
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Feb 20, 2018

Page view(s)

23
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.