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|Title:||PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model|
|Authors:||Han, G. |
|Citation:||Han, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210114|
|Abstract:||We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET. © 2012 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
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