Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Refined By:
Date Issued:  2007

Results 1-17 of 17 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
22007A near-infrared, continuous wavelength, in-lens spectroscopic photon emission microscope systemTan, S.L.; Toh, K.H.; Phang, J.C.H. ; Chan, D.S.H. ; Chua, C.M.; Koh, L.S.
32007A novel hafnium carbide (HfCx) metal gate electrode for NMOS device applicationWan, S.H.; Chen, S.; Xing, P.W.; Chan, D.S.H. ; Byung, J.C. 
42007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
5Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
6Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
72007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
816-Oct-2007Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Teo, E.Y.H. ; Zhu, C.X. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.G. 
92007Determination of intrinsic spectra from frontside & backside photon emission spectroscopyTan, S.L.; Toh, K.H.; Chan, D.S.H. ; Phang, J.C.H. ; Chua, C.M.; Koh, L.S.
10Feb-2007Electrically bistable thin-film device based on PVK and GNPs polymer materialSong, Y.; Ling, Q.D. ; Lim, S.L.; Teo, E.Y.H. ; Tan, Y.P.; Li, L.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
11Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
122007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
132007Low energy N2 ion bombardment for removal of (Hf O2) x (SiON)1-x in dilute HFHwang, W.S.; Cho, B.-J. ; Chan, D.S.H. ; Yoo, W.J.
142007Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETsTan, S.L.; Ang, K.W.; Toh, K.H.; Isakov, D.; Chua, C.M.; Koh, L.S.; Yeo, Y.C. ; Chan, D.S.H. ; Phang, J.C.H. 
152-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1624-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
172007Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.