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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

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Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 42 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
126-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
2Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
3Sep-2002Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorptionCheah, C.W.; Karunasiri, G.; Tan, L.S. 
415-Apr-2002Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III-V semiconductor Γ quantum wellsCheah, C.W.; Tan, L.S. ; Karunasiri, G.
52004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
62005Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealingPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Du, A.Y.
726-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
81-May-2009Effects of femtosecond laser ablation on Vitrovac 6025XTan, L.S. ; Seet, H.L. ; Hong, M.H. ; Li, X.P. 
9Sep-2004Electrical evaluation of laser annealed junctions by Hall measurementsPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Ng, K.T.; Bhat, M.; Chan, L.
101-May-2007Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideLiu, C.; Chor, E.F. ; Tan, L.S. 
112007Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser depositionLiu, C.; Chor, E.F. ; Tan, L.S. ; Du, A.
1219-Sep-2007Field emission enhancement from patterned gallium nitride nanowiresNg, D.K.T.; Hong, M.H. ; Tan, L.S. ; Zhu, Y.W. ; Sow, C.H. 
13Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
141-Oct-2007Hybrid laser micro/nanofabrication of phase change materials with combination of chemical processingLin, Y. ; Hong, M.H. ; Chen, G.X. ; Lim, C.S. ; Tan, L.S. ; Wang, Z.B.; Shi, L.P.; Chong, T.C. 
152013Hybrid plasmonic structures: Design and fabrication by laser meansXu, L.; Luo, F.F.; Tan, L.S. ; Luo, X.G.; Hong, M.H. 
1629-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C. 
1726-Mar-2007Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivationLiu, C.; Chor, E.F. ; Tan, L.S. 
18Jan-2011In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectricLiu, X.; Chin, H.-C.; Tan, L.-S. ; Yeo, Y.-C. 
191-Sep-2008Intermittent deposition and interface formation on the microstructure and magnetic properties of NiFe/Cu composite wiresJiang, L.; Tan, L.S. ; Ruan, J.Z.; Yuan, W.Z.; Li, X.P. ; Zhao, Z.J.
202006Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistorsLiu, C.; Chor, E.F. ; Tan, L.S.