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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
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Publications

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Department:  ELECTRICAL ENGINEERING

Results 1-20 of 48 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Oct-1977A multilayer correction scheme for spreading resistance measurementsChoo, S.C. ; Leong, M.S. ; Hong, H.L.; Li, L.; Tan, L.S. 
22000Activation of beryllium-implanted GaN by two-step annealingSun, Yuejun; Tan, Leng Seow ; Chua, Soo Jin ; Prakash, Savarimuthu 
32000Activation of beryllium-implanted GaN by two-step annealingSun, Y.; Tan, L.S. ; Chua, S.J. ; Prakash, S. 
4Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
5Mar-1997Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substratesPhua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. 
63-Jul-1997Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulatorRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. 
71-Nov-1991Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current techniqueLau, Wai Shing ; Chong, Tow Chong ; Tan, Leng Seow ; Goo, Chuen Hang; Goh, Kian Seng
8Jul-1988Contact resistance calculations based on a variational methodLeong, M.S. ; Choo, S.C. ; Tan, L.S. ; Goh, T.L.
91998Design and analysis of a double barrier quantum well infrared photodetectorTan, L.S. ; Cheah, C.W.; Karunasiri, G. ; Raman, A.
101999Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage techniqueTan, L.S. ; Huynh, F.N.L.
112000Determination of minority carrier diffusion lengths in the denuded zones of silicon wafers by surface photovoltage measurementsTan, L.S. ; Koh, S.H.; Prakash, S. ; Choi, W.K. ; Zhang, Z.
121999Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETsRao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. 
132000Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage techniqueZhang, Z.; Tan, L.S. ; Koh, S.M.; Liu, H.M.; Flottmann, D.
141994Effects of low-temperature grown GaAs intermediate layers on the crystalline quality of GaAs-ON-Si epilayersChong, T.C. ; Phua, C.C.; Lau, W.S. ; Tan, L.S. 
1515-Mar-2000Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsChoi, W.K. ; Chong, N.B.; Tan, L.S. ; Han, L.J.
161999Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parametersRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
171999Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2OChoi, W.K. ; Tan, L.S. ; Lim, J.Y.; Pek, S.G.
18Feb-1997Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysisAntoszewski, J.; Dell, J.M.; Faraone, L.; Tan, L.S. ; Raman, A. ; Chua, S.J. ; Holmes, D.S.; Lindemuth, J.R.; Meyer, J.R.
19Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
201996High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxyGoo, C.H.; Lau, W.S. ; Chong, T.C. ; Tan, L.S. ; Chu, P.K.