Lim Hsiang Fang

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Full Name

Lim Hsiang Fang

(not current staff)

Variants

Lim, H.F.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elelhf@nus.edu.sg

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	Issue Date	Title	Author(s)
1	2003	High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications	Hu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
2	Dec-2003	High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics	Ding, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
3	Apr-2003	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices	Yu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
4	2003	Robust HfN Metal Gate Electrode for Advanced MOS Devices Application	Yu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.
5	15-Jun-2004	SIMS study on N diffusion in hafnium oxynitride	Gui, D.; Kang, J. ; Yu, H. ; Lim, H.F.
6	1-Mar-2004	Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering	Kang, J.F. ; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Hu, H.; Lim, H.F. ; Wang, W.D.; Gui, D.; Kwong, D.-L.