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|Title:||SIMS study on N diffusion in hafnium oxynitride||Authors:||Gui, D.
|Issue Date:||15-Jun-2004||Citation:||Gui, D., Kang, J., Yu, H., Lim, H.F. (2004-06-15). SIMS study on N diffusion in hafnium oxynitride. Applied Surface Science 231-232 : 590-593. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.03.116||Abstract:||As the MOS device feature size continues to shrink, novel high-k gate dielectrics should be adopted to reduce the unacceptable high gate leakage current due to direct tunneling. HfO2 is one of the most promising high-k materials. It was reported that HfNxOy formed by incorporating N into HfO2 could improve the thermal stability and electrical properties of the gate dielectric films. However, N loss can occur due to subsequent high temperature processes, such as rapid thermal processing (RTP). It is necessary to understand the mechanism of N loss from the academic and application points of view. In this study, SIMS was applied to investigate the N diffusion behavior in sputter-deposited HfNxOy after RTP processing. The results showed that N loss is due to out-diffusion of N to the surface. On the other hand, segregation of N at the interface of HfN xOy/Si was observed. N acts as a good barrier to O diffusion from HfNxOy to Si. The results show that oxygen flooding is unfavorable for characterizing N in HfNxOy/Si since oxygen flooding can enhance the N background. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/84186||ISSN:||01694332||DOI:||10.1016/j.apsusc.2004.03.116|
|Appears in Collections:||Staff Publications|
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